Semiconductor nanoparticles and method of producing semiconductor nanoparticles

• Main Authors: Fukatsu, Akihiro, Kameyama, Tatsuya, Oyamatsu, Daisuke, Torimoto, Tsukasa
• Format: Patent
• Language: English
• Published: 21.07.2020
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.