Method of manufacturing a variable resistance memory device
In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfe...
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Format | Patent |
Language | English |
Published |
02.06.2020
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Abstract | In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr. |
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AbstractList | In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr. |
Author | Oh, Se-Chung Hong, Kyung-Il Lee, Jung-Min Lee, Dong-Kyu Park, Jung-Hwan Kim, Ju-Hyun |
Author_xml | – fullname: Park, Jung-Hwan – fullname: Kim, Ju-Hyun – fullname: Oh, Se-Chung – fullname: Lee, Dong-Kyu – fullname: Lee, Jung-Min – fullname: Hong, Kyung-Il |
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Snippet | In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Method of manufacturing a variable resistance memory device |
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