Methods and apparatus for wafer-level die bridge
A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the br...
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Format | Patent |
Language | English |
Published |
12.05.2020
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Subjects | |
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Abstract | A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die. A second mold layer is formed on the first mold layer to encapsulate the plurality of dies. The temporary bond is then broken and the carrier is removed, exposing the RDL connections. |
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AbstractList | A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die. A second mold layer is formed on the first mold layer to encapsulate the plurality of dies. The temporary bond is then broken and the carrier is removed, exposing the RDL connections. |
Author | Hsiung, Chien-Kang Sundarrajan, Arvind |
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Snippet | A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Methods and apparatus for wafer-level die bridge |
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