Semiconductor device

A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI,...

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Main Author Nagai, Yukihiro
Format Patent
LanguageEnglish
Published 31.03.2020
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Abstract A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI, and a second horizontal portion connected to the vertical portion. The semiconductor device further includes a first spacer on a sidewall of the first gate structure and the STI and a second spacer on another sidewall of the first gate structure and on the second horizontal portion.
AbstractList A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI, and a second horizontal portion connected to the vertical portion. The semiconductor device further includes a first spacer on a sidewall of the first gate structure and the STI and a second spacer on another sidewall of the first gate structure and on the second horizontal portion.
Author Nagai, Yukihiro
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Snippet A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device
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