Semiconductor device
A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI,...
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Format | Patent |
Language | English |
Published |
31.03.2020
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Subjects | |
Online Access | Get full text |
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Abstract | A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI, and a second horizontal portion connected to the vertical portion. The semiconductor device further includes a first spacer on a sidewall of the first gate structure and the STI and a second spacer on another sidewall of the first gate structure and on the second horizontal portion. |
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AbstractList | A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure comprises a first horizontal portion on the STI, a vertical portion connected to the first horizontal portion and extended into part of the STI, and a second horizontal portion connected to the vertical portion. The semiconductor device further includes a first spacer on a sidewall of the first gate structure and the STI and a second spacer on another sidewall of the first gate structure and on the second horizontal portion. |
Author | Nagai, Yukihiro |
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Notes | Application Number: US201816191413 |
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Snippet | A semiconductor device includes a shallow trench isolation (STI) in a substrate and a first gate structure on the STI. Preferably, the first gate structure... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor device |
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