Semiconductor structure and method of forming the same

Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on t...

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Main Authors Wang, Chih-Hung, Cheng, An-Hsiu, Chou, Cheng-Hua, Huang, Chi-Cheng, Lin, Hung-Wei, Pan, Chih-Hao, Shih, Ping-Chia, Li, Kuo-Lung, Liu, Zi-Jun
Format Patent
LanguageEnglish
Published 03.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.
Bibliography:Application Number: US201816005422