Cover

Loading…
Abstract A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
AbstractList A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
Author Komiyama, Shozo
Toshimori, Yuto
Shiono, Ichiro
Author_xml – fullname: Toshimori, Yuto
– fullname: Komiyama, Shozo
– fullname: Shiono, Ichiro
BookMark eNrjYmDJy89L5WRwdExXSMzJya9UKC4oLSlJLcrMS1coSSxKTy1RSMxLUYBLp2Xm5CrkJuaVpiUml5SCleWmlmTkp_AwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUkvjQYEMDU3NzMwtzJyNjYtQAAAa5M4o
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US10577687B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US10577687B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:59:40 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US10577687B23
Notes Application Number: US201615313127
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200303&DB=EPODOC&CC=US&NR=10577687B2
ParticipantIDs epo_espacenet_US10577687B2
PublicationCentury 2000
PublicationDate 20200303
PublicationDateYYYYMMDD 2020-03-03
PublicationDate_xml – month: 03
  year: 2020
  text: 20200303
  day: 03
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies MITSUBISHI MATERIALS CORPORATION
RelatedCompanies_xml – name: MITSUBISHI MATERIALS CORPORATION
Score 3.2523913
Snippet A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and...
SourceID epo
SourceType Open Access Repository
SubjectTerms ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TREATMENT OF ALLOYS OR NON-FERROUS METALS
Title Ag alloy sputtering target and Ag alloy film manufacturing method
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200303&DB=EPODOC&locale=&CC=US&NR=10577687B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMbVMSjNNTDPWNTROTNU1SbUw0AXWO5a6SUYGlhaJiQapKeDF475-Zh6hJl4RphFMDFmwvTDgc0LLwYcjAnNUMjC_l4DL6wLEIJYLeG1lsX5SJlAo394txNZFDdo7Bq20MjBWc3GydQ3wd_F3VnN2tg0NVvMLsgVdZwtsWZs7AYtrVmAz2hyUG1zDnEC7UgqQqxQ3QQa2AKBpeSVCDEypecIMnM6wm9eEGTh8oRPeQCY07xWLMDg6piuAZskrFYoLwLdLAysdBchCboXEvBQFuHRaZk6uQm5iXilo0wJ4F6IC5J5oUQZFN9cQZw9doFvi4R6PDw1GONtYjIElLz8vVYJBIRXYCUtLSU5KAfYFTNIMUhNNzSwSLY3TktOA3RPDJENJBinc5kjhk5Rm4AIFIniNlbEMA0tJUWmqLLDSLUmSA4cWALGYhyY
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8JADG8IGvFNUSP4dSZmb4vDMWQPi2EfZCpfETC8kdt2ZzAyFjdi_O_tHQN80bfmmjS9S9pe735tAW4MM-AG5bpa0ylT66ypqRh3TDW408wmpRqLJHi822v44_rTxJgU4H1dCyP7hH7J5ohoUSHaeyb9dbJ9xHIltjK9DWa4tHhojyxXybNjgbTSdMW1LW_Qd_uO4jjWeKj0XiwxzhZv1vc2uusdQQhr8F5tUZWS_A4p7QPYHaC0ODuEAovLUHLWk9fKsNfNP7yRzG0vPYJW642IX_JvkiZyujQGHbICchMaR2TD5rOPOZnTeCmKFmQVIlnNiT6G67Y3cnwVdZluNj4dD7dq6ydQjBcxOwXCMAnjURhEmAvUucao0WhSU-chx_SkFtQqUP1bTvU_5hWU_FG3M-089p7PYF8cqMRb6edQzD6X7AIDcBZcypP7ATQ9ihk
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Ag+alloy+sputtering+target+and+Ag+alloy+film+manufacturing+method&rft.inventor=Toshimori%2C+Yuto&rft.inventor=Komiyama%2C+Shozo&rft.inventor=Shiono%2C+Ichiro&rft.date=2020-03-03&rft.externalDBID=B2&rft.externalDocID=US10577687B2