Quantum dot photoresist and manufacturing method thereof, display substrate and display device

• Main Authors: Qi, Yonglian, Zhou, Tingting, Zhang, Bin
• Format: Patent
• Language: English
• Published: 29.10.2019
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTROGRAPHY; FREQUENCY-CHANGING; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; TRANSPORTING

A quantum dot photoresist and a manufacturing method thereof, a display substrate and a display device are provided. The manufacturing method of the quantum dot photoresist includes: mixing quantum dots, photodiffusion materials and photoresist mother solution; surface treatment is carried out on the photodiffusion materials or the quantum dots. The quantum dot photoresist prepared by the manufacturing method of the quantum dot photoresist can be applied to the display device, and the photodiffusion materials can refract incident light to the quantum dots, so that light irradiated onto the quantum dots is increased, and thus, a problem of a low utilization rate of the incident light can be solved, and a display effect of the display device can be enhanced.