Semiconductor substrate and manufacturing method thereof

A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. Th...

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Bibliographic Details
Main Authors Hsueh, Fang-Chang, Lin, Heng-Kuang
Format Patent
LanguageEnglish
Published 01.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.
Bibliography:Application Number: US201816056545