Semiconductor devices including enlarged contact hole and methods of forming the same
Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may als...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
17.09.2019
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Subjects | |
Online Access | Get full text |
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Abstract | Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening. |
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AbstractList | Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening. |
Author | Son, Yoon Ho Park, Im Soo Shin, Jae Uk Chung, Sung Yoon Ko, Yong Sun |
Author_xml | – fullname: Park, Im Soo – fullname: Chung, Sung Yoon – fullname: Shin, Jae Uk – fullname: Son, Yoon Ho – fullname: Ko, Yong Sun |
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Notes | Application Number: US201815861950 |
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Snippet | Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor devices including enlarged contact hole and methods of forming the same |
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