Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and method for manufacturing the semiconductor device

A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a dr...

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Main Authors Kim, Min-Cheol, Lee, So-Hyung, Jung, Ho-Young, Chang, Youn-Gyoung, Yang, Jeong-Suk, Yoo, Ha-Jin, Park, Kwon-Shik
Format Patent
LanguageEnglish
Published 10.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.
Bibliography:Application Number: US201815934360