Semiconductor devices including self-aligned active regions for planar transistor architecture
Active regions for planar transistor architectures may be patterned in one lateral direction, i.e., the width direction, on the basis of a single lithography process, followed by deposition and etch processes, thereby providing multiple width dimensions and multiple spaces or pitches with reduced pr...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
27.08.2019
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Subjects | |
Online Access | Get full text |
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Abstract | Active regions for planar transistor architectures may be patterned in one lateral direction, i.e., the width direction, on the basis of a single lithography process, followed by deposition and etch processes, thereby providing multiple width dimensions and multiple spaces or pitches with reduced process variability due to the avoidance of overlay errors typically associated with conventional approaches when patterning the width dimensions and spaces on the basis of a sequence of sophisticated lithography processes. Consequently, increased packing density, enhanced performance and reduced manufacturing costs may be achieved on the basis of process techniques as disclosed herein. |
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AbstractList | Active regions for planar transistor architectures may be patterned in one lateral direction, i.e., the width direction, on the basis of a single lithography process, followed by deposition and etch processes, thereby providing multiple width dimensions and multiple spaces or pitches with reduced process variability due to the avoidance of overlay errors typically associated with conventional approaches when patterning the width dimensions and spaces on the basis of a sequence of sophisticated lithography processes. Consequently, increased packing density, enhanced performance and reduced manufacturing costs may be achieved on the basis of process techniques as disclosed herein. |
Author | Smith, Elliot John Yoon, Hongsik Chan, Nigel Kenkare, Nilesh |
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Snippet | Active regions for planar transistor architectures may be patterned in one lateral direction, i.e., the width direction, on the basis of a single lithography... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor devices including self-aligned active regions for planar transistor architecture |
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