In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma
A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapo...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
28.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell. |
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Bibliography: | Application Number: US201514609985 |