Multi regime plasma wafer processing to increase directionality of ions
Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than z...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English |
| Published |
28.05.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed. |
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| AbstractList | Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed. |
| Author | Kozakevich, Felix Marakhtanov, Alexei Lucchesi, Kenneth Chen, Zhigang Holland, John Patrick Zhao, Lin |
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| Snippet | Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the... |
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| Title | Multi regime plasma wafer processing to increase directionality of ions |
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