Semiconductor device and method of manufacturing the same

A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of...

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Bibliographic Details
Main Authors Ishikura, Taishi, Isobayashi, Atsunobu, Kajita, Akihiro, Kitamura, Masayuki
Format Patent
LanguageEnglish
Published 05.02.2019
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Summary:A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of the stacked body, and a graphene film between at least one of the conductive layers and adjacent insulating layers and between the at least one of the conductive layers and the columnar portion.
Bibliography:Application Number: US201715688646