Semiconductor device and method of manufacturing the same
A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
05.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of the stacked body, and a graphene film between at least one of the conductive layers and adjacent insulating layers and between the at least one of the conductive layers and the columnar portion. |
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Bibliography: | Application Number: US201715688646 |