Fin field-effect transistor having an oxide layer under one or more of the plurality of fins
A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped semiconductor layer on the first diffusion stop layer, forming a second diffusion stop layer on the doped semiconductor layer, forming a fin layer on th...
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Format | Patent |
Language | English |
Published |
08.01.2019
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Abstract | A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped semiconductor layer on the first diffusion stop layer, forming a second diffusion stop layer on the doped semiconductor layer, forming a fin layer on the doped semiconductor layer, patterning the first and second diffusion stop layers, the doped semiconductor layer, the fin layer and a portion of the bulk substrate, oxidizing the doped semiconductor layer to form an oxide layer, and forming a dielectric on the bulk substrate adjacent the patterned portion of the bulk substrate, the patterned first diffusion stop layer and the oxide layer. |
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AbstractList | A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped semiconductor layer on the first diffusion stop layer, forming a second diffusion stop layer on the doped semiconductor layer, forming a fin layer on the doped semiconductor layer, patterning the first and second diffusion stop layers, the doped semiconductor layer, the fin layer and a portion of the bulk substrate, oxidizing the doped semiconductor layer to form an oxide layer, and forming a dielectric on the bulk substrate adjacent the patterned portion of the bulk substrate, the patterned first diffusion stop layer and the oxide layer. |
Author | Reznicek, Alexander Schepis, Dominic J Hashemi, Pouya Cheng, Kangguo |
Author_xml | – fullname: Schepis, Dominic J – fullname: Cheng, Kangguo – fullname: Reznicek, Alexander – fullname: Hashemi, Pouya |
BookMark | eNqNi00KwjAQRrPQhX93GA9QMAqta8XiXt0JZWgndiBOQpKKvb0RPICb78HHe3M1ESc0U_eaBQyT7QoyhtoEKaBEjskF6PHF8gAUcG_uCCyOFGCQLm-uIStPFzINpJ7A2yGg5TR-D8MSl2pq0EZa_bhQ6_p0PZ4L8q6h6LElodTcLnqjq0qX-8N294_zAah2PR4 |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US10177168B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US10177168B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 16:28:58 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US10177168B23 |
Notes | Application Number: US201715444559 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190108&DB=EPODOC&CC=US&NR=10177168B2 |
ParticipantIDs | epo_espacenet_US10177168B2 |
PublicationCentury | 2000 |
PublicationDate | 20190108 |
PublicationDateYYYYMMDD | 2019-01-08 |
PublicationDate_xml | – month: 01 year: 2019 text: 20190108 day: 08 |
PublicationDecade | 2010 |
PublicationYear | 2019 |
RelatedCompanies | International Business Machines Corporation |
RelatedCompanies_xml | – name: International Business Machines Corporation |
Score | 3.1737707 |
Snippet | A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Fin field-effect transistor having an oxide layer under one or more of the plurality of fins |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190108&DB=EPODOC&locale=&CC=US&NR=10177168B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVdH6YATJLZi2Sd0cgtA8KEIf2EZ6EEqeUimb0kb05zuzttaL3sImDLtDZr_Z3fm-Bbi1MkvkzaShR00W1SYE1WOjIfSUj_yyxI7tnPnOvX67G5qPE2tSgbcNF0bphH4ocUSKqITivVTz9WK7ieWp2srVXTyjpuIhGDuetl4dM7oZQvM6jj8ceANXc10nHGn9J4f_PFoaiA5N1zucRrPOvv_cYVbK4jekBIewOyRrsjyCSiZrsO9ubl6rwV5vfeBNj-vYWx3DSzCTqArO9O8iDCwZZ5TMBzLXXr5iJLH4pGHhPKJUGpkgtsRCZkifcEUtFjlSxoeLOattUALODflMrk7gJvDHblenbk5_fDINR9sRtU6hKsnWGSAlb5YdRamR5pFpmrZIWvexZaSCUNzIzfY51P-2U__v5QUcsH_V7oO4hGq5fM-uCI_L-Fo58gtMAY_D |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1NT8JAEJ0QNOJNUSP4tSamt8YCLWwPjQktTVUoRMBwMCH9NBiyJVCjP9-ZFcSL3pptM9mddPbN7s57C3BjJAZP61FNDeokqo0IqoZajasxHfklkRmaKfGde37TG-sPE2NSgLcNF0bqhH5IcUSMqAjjPZfz9WK7ieXI2srVbTjDpuzOHVmOsl4dE7ppXHHaVmfQd_q2YtvWeKj4Txb9ebg04G2crndapM5LqdNzm1gpi9-Q4h7A7gCtifwQCokoQ8ne3LxWhr3e-sAbH9extzqCF3cmmCw4U7-LMFhOOCNlPhhx7cUrCwTLPnFYbB5gKs2IILZkmUgYfkIVtSxLGWZ8bDEntQ1MwKkhnYnVMVy7nZHtqdjN6Y9PpuPhdkSNEygKtHUKDJM3wwyCWIvTQNd1k0eNVmhoMUcU11K9WYHq33aq_728gpI36nWn3Xv_8Qz2yddyJ4KfQzFfvicXiM15eCmd-gUuQpKw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Fin+field-effect+transistor+having+an+oxide+layer+under+one+or+more+of+the+plurality+of+fins&rft.inventor=Schepis%2C+Dominic+J&rft.inventor=Cheng%2C+Kangguo&rft.inventor=Reznicek%2C+Alexander&rft.inventor=Hashemi%2C+Pouya&rft.date=2019-01-08&rft.externalDBID=B2&rft.externalDocID=US10177168B2 |