Tungsten sputtering target and method for producing same

• Main Authors: Ohashi, Kazumasa, Oda, Kunihiro
• Format: Patent
• Language: English
• Published: 08.01.2019
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.