Implant after through-silicon via (TSV) etch to getter mobile ions
A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capa...
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| Main Authors | , , , , , , |
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| Format | Patent |
| Language | English |
| Published |
01.01.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench. |
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| AbstractList | A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench. |
| Author | Ho, Herbert L Graves-Abe, Troy L Kothandaraman, Chandrasekharan Farooq, Mukta G Greene, Brian J Hannon, Robert Collins, Christopher |
| Author_xml | – fullname: Greene, Brian J – fullname: Graves-Abe, Troy L – fullname: Collins, Christopher – fullname: Hannon, Robert – fullname: Ho, Herbert L – fullname: Farooq, Mukta G – fullname: Kothandaraman, Chandrasekharan |
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| Notes | Application Number: US201614994598 |
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| Snippet | A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Implant after through-silicon via (TSV) etch to getter mobile ions |
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