Implant after through-silicon via (TSV) etch to getter mobile ions

A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capa...

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Bibliographic Details
Main Authors Greene, Brian J, Graves-Abe, Troy L, Collins, Christopher, Hannon, Robert, Ho, Herbert L, Farooq, Mukta G, Kothandaraman, Chandrasekharan
Format Patent
LanguageEnglish
Published 01.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench.
Bibliography:Application Number: US201614994598