Three-dimensional memory device having conductive support structures and method of making thereof

• Main Authors: Ogawa, Hiroyuki, Masamori, Yohei
• Format: Patent
• Language: English
• Published: 30.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An alternating stack of insulating layers and sacrificial material layers is formed over a horizontal layer, which can be formed over a lower-interconnect-level dielectric material layer overlying a substrate. Structural integrity of insulating layers vertically spaced from one another by backside r...