L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith

A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 10...

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Bibliographic Details
Main Authors Kryder, Mark H, Huang, Efrem Y
Format Patent
LanguageEnglish
Published 03.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1×106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer-torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.
Bibliography:Application Number: US201515515380