Multi regime plasma wafer processing to increase directionality of ions

Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than z...

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Bibliographic Details
Main Authors Kozakevich, Felix, Lucchesi, Kenneth, Zhao, Lin, Holland, John Patrick, Chen, Zhigang, Marakhtanov, Alexei
Format Patent
LanguageEnglish
Published 19.06.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.
Bibliography:Application Number: US201715703280