Wafer tray and chemical vapor deposition equipment
The utility model provides a wafer tray and a chemical vapor deposition device, the wafer tray comprises a tray pit on the tray, a support step and a boss are arranged in the tray pit, the height of the boss is greater than or equal to that of the tray, and the boss extends towards the center of the...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.10.2022
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Subjects | |
Online Access | Get full text |
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Abstract | The utility model provides a wafer tray and a chemical vapor deposition device, the wafer tray comprises a tray pit on the tray, a support step and a boss are arranged in the tray pit, the height of the boss is greater than or equal to that of the tray, and the boss extends towards the center of the tray pit. The distance between the wafer positioning notch and the side wall of the disc pit is reduced, the boss can play a role in extending the side wall of the disc pit so as to form an irregular disc pit suitable for the edge contour of the wafer, the purpose of adjusting the temperature distribution of the edge of the wafer is achieved, the uniformity of the edge of the wafer and the overall temperature is facilitated, and the film thickness consistency of chemical deposition of the wafer is improved. |
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AbstractList | The utility model provides a wafer tray and a chemical vapor deposition device, the wafer tray comprises a tray pit on the tray, a support step and a boss are arranged in the tray pit, the height of the boss is greater than or equal to that of the tray, and the boss extends towards the center of the tray pit. The distance between the wafer positioning notch and the side wall of the disc pit is reduced, the boss can play a role in extending the side wall of the disc pit so as to form an irregular disc pit suitable for the edge contour of the wafer, the purpose of adjusting the temperature distribution of the edge of the wafer is achieved, the uniformity of the edge of the wafer and the overall temperature is facilitated, and the film thickness consistency of chemical deposition of the wafer is improved. |
Author | HU, JIAN-ZHENG GUO, SHIPING WANG, JIA-YI CHEN, YAO JIANG, YONG |
Author_xml | – fullname: WANG, JIA-YI – fullname: CHEN, YAO – fullname: HU, JIAN-ZHENG – fullname: JIANG, YONG – fullname: GUO, SHIPING |
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Notes | Application Number: TW202211201943U |
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RelatedCompanies | ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA |
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Snippet | The utility model provides a wafer tray and a chemical vapor deposition device, the wafer tray comprises a tray pit on the tray, a support step and a boss are... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | Wafer tray and chemical vapor deposition equipment |
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