Method for measuring and correcting misregistration between layers in a semiconductor device, and misregistration targets useful therein

A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers...

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Bibliographic Details
Main Authors VOLKOVICH, ROIE, ZABERCHIK, MORAN, YERUSHALMI, LIRAN, MILO, RENAN, IZRAELI, DAVID, FELER, YOEL
Format Patent
LanguageChinese
English
Published 21.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.
Bibliography:Application Number: TW20209103938