Semiconductor device and method for manufacturing the same

A semiconductor device include a substrate including a peripheral region, a first active pattern provided on the peripheral region of the substrate, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns which are alternately stacked...

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Bibliographic Details
Main Authors YANG, BONG SEOB, SON, NAKJIN, LEE, SEUNGJOON, CHOI, DOYOUNG
Format Patent
LanguageChinese
English
Published 21.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device include a substrate including a peripheral region, a first active pattern provided on the peripheral region of the substrate, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns which are alternately stacked, a first gate electrode intersecting the first active pattern, a pair of first source/drain patterns provided at both sides of the first gate electrode, respectively, and a first gate insulating layer disposed between the first gate electrode and the first active pattern. The first gate insulating layer includes a first insulating layer formed on the first active pattern, a second insulating layer formed on the first insulating layer, and a high-k dielectric layer formed on the second insulating layer. The first gate insulating layer contains a first dipole element including lanthanum (La), aluminum (Al), or a combination thereof.
Bibliography:Application Number: TW20209125489