Systems and methods for depositing a homogenous interface for pecvd metal-doped carbon hardmasks

A method for depositing a hardmask layer on a substrate includes nitridating a first layer of the substrate. The first layer is selected from a group consisting of silicon dioxide and silicon nitride. An amorphous carbon layer is deposited on the nitridated first layer via plasma-enhanced chemical v...

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Bibliographic Details
Main Author SHAIKH, FAYAZ
Format Patent
LanguageChinese
English
Published 21.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for depositing a hardmask layer on a substrate includes nitridating a first layer of the substrate. The first layer is selected from a group consisting of silicon dioxide and silicon nitride. An amorphous carbon layer is deposited on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD). A monolayer is deposited on the amorphous carbon layer using gas mixture including a metal precursor gas with a reducing agent and without plasma. A bulk metal-doped carbon hardmask layer is deposited on the monolayer.
Bibliography:Application Number: TW20187139989