Method for manufacturing semiconductor structure and processing device

Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or...

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Main Authors CHEN, SZU-YING, CHIU, YA-WEN, WANG, Y. H, LIAO, C. P, SYUE, SEN-HONG, CHAU, CHENG-PO, CHAN, Y. C
Format Patent
LanguageChinese
English
Published 11.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.
Bibliography:Application Number: TW20198122255