Silicon carbide wafers and method of fabricating the same
A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm.
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Main Author | |
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Format | Patent |
Language | Chinese English |
Published |
11.09.2022
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Subjects | |
Online Access | Get full text |
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Abstract | A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm. |
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AbstractList | A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm. |
Author | LIN, CHING-SHAN |
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RelatedCompanies | GLOBALWAFERS CO., LTD |
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Snippet | A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | Silicon carbide wafers and method of fabricating the same |
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