Two steps l-shaped selective epitaxial growth

• Main Authors: LIU, XIAO XIN, XUE, LEI, GENG, WAN BO, SHIUE, CHIAANN, HUANG, BO, GAO, TING TING
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides a method of processing a semiconductor device having a stack formed over a source sacrificial layer above a substrate, a channel structure extending vertically through the stack and the source sacrificial layer, a gate line cut trench extending vertically through the...