Two steps l-shaped selective epitaxial growth
The present disclosure provides a method of processing a semiconductor device having a stack formed over a source sacrificial layer above a substrate, a channel structure extending vertically through the stack and the source sacrificial layer, a gate line cut trench extending vertically through the...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
01.09.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present disclosure provides a method of processing a semiconductor device having a stack formed over a source sacrificial layer above a substrate, a channel structure extending vertically through the stack and the source sacrificial layer, a gate line cut trench extending vertically through the stack, and a spacer layer covering uncovered top and side surfaces of the stack. The method can include exposing a lower sidewall of the channel structure by removing the source sacrificial layer, forming a protection layer on all uncovered surfaces, exposing a channel layer of the channel structure by removing a first portion of the protection layer and an insulating layer of the channel structure, forming an initial source connection layer over the exposed channel layer, exposing the substrate by removing a second portion of the protection layer, and forming a source connection layer over the initial source connection layer and the exposed substrate. |
---|---|
Bibliography: | Application Number: TW20209130920 |