METHOD FOR TRIMING SEMICONDUCTOR STRUCTURE

• Main Authors: CHEN, CHAO-HSUING, CHIU, MINGIEN, CHIU, MAO-HSING, CHEN, YING, SUN, YUNG-TAI, CHIU, CHAN-YI
• Format: Patent
• Language: Chinese; English
• Published: 21.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method to trim a semiconductor structure first provides a substrate. The substrate includes a first region and a second region. The first region and the second region respectively include a first stack structure and a second stack structure. The top of the first stack structure and of the second stack structure respectively includes a patterned hard mask. Second, a patterned photoresist is formed to cover the first stack structure and the second stack structure. The patterned photoresist includes an opening to expose the second stack structure. Then the patterned photoresist and the patterned hard mask are removed. A part of the patterned hard mask is not removed and converted to become a hard mask residue. Next, a photoresist is formed on the substrate to completely cover the first stack structure and the second stack structure. Later, the photoresist and the hard mask residue atop the second stack structure are removed.