Integrated assemblies, and methods of forming integrated assemblies
Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificia...
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| Main Author | |
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| Format | Patent |
| Language | Chinese English |
| Published |
11.12.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. The second stack has alternating first and second levels. A second opening is formed through the second stack and through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack, through the third layer, and to the second layer. The second layer is removed, forming a conduit. Second semiconductor material is formed within the conduit. Dopant is out-diffused from the second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies. |
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| AbstractList | Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. The second stack has alternating first and second levels. A second opening is formed through the second stack and through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack, through the third layer, and to the second layer. The second layer is removed, forming a conduit. Second semiconductor material is formed within the conduit. Dopant is out-diffused from the second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies. |
| Author | HALLER, GORDON A |
| Author_xml | – fullname: HALLER, GORDON A |
| BookMark | eNrjYmDJy89L5WRw9swrSU0vSixJTVFILC5OzU3KyUwt1lFIzEtRyE0tychPKVbIT1NIyy_KzcxLV8jEppqHgTUtMac4lRdKczMouLmGOHvophbkx6cWFyQmp-allsSHhHuam1iamVs6ORkToQQAUXQ0ng |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | TWI749679BB |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_TWI749679BB3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 30 05:40:22 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | Chinese English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_TWI749679BB3 |
| Notes | Application Number: TW20209126287 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211211&DB=EPODOC&CC=TW&NR=I749679B |
| ParticipantIDs | epo_espacenet_TWI749679BB |
| PublicationCentury | 2000 |
| PublicationDate | 20211211 |
| PublicationDateYYYYMMDD | 2021-12-11 |
| PublicationDate_xml | – month: 12 year: 2021 text: 20211211 day: 11 |
| PublicationDecade | 2020 |
| PublicationYear | 2021 |
| RelatedCompanies | MICRON TECHNOLOGY, INC |
| RelatedCompanies_xml | – name: MICRON TECHNOLOGY, INC |
| Score | 3.4981136 |
| Snippet | Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | ELECTRICITY |
| Title | Integrated assemblies, and methods of forming integrated assemblies |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211211&DB=EPODOC&locale=&CC=TW&NR=I749679B |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhT1DedyuYXeZA-WWzXzzwUoV9sgtuQ6vY2miZle7AdtiL4673WVn1QIQ8hCcflyOXukvsAuKpkuoUnRWYxZ2igcFOmpkhlxrXU0gQfqrz2tpiYo0f9bmEsOrBqY2HqPKFvdXJE5KgE-b2s7-vN9yOWX_tWFjdsjUP5bRg5vtRYx2jNYJN81wlmU3_qSZ7nRHNp8uCMLZ2aFnW3YBuVaKviheDJrWJSNj8FSngAOzOElZWH0Hlf9WDPa-uu9WD3vvnuxm7DecUReOM2rwMnqO-KZ8RKFNckzjj5rAJdkDwllQqKwoisf1t9DCQMIm8kIzbLr40vo3mLtqudQDfLM9EHQjnnydAcciXRdMOw7ZgqwkoVO2GJMCkdwOBPMKf_zJ3BfkXByldDVc-hW768iguUuCW7rIn1AVfUiAE |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dT4Mw8DKncb7p1Gx-9sHwJHHABvSBmPAV0H3FoNvbArRke5AtgjHx13sgqA9q0oembS7XS693194HwFUh0zU8KWIUsggNFKaKVOWJGDEl0RTOZImV3hZj1Xvs380H8wYs61iYMk_oW5kcETkqRn7Py_t68_2IZZe-ldlNtMKh9a0bGLZQWcdozWATbNNwphN7YgmWZQQzYfxg-Fqfqho1t2AbFWyt4AXnySxiUjY_BYq7DztThJXmB9B4X7ahZdV119qwO6q-u7FbcV52CJZf53VgBPVd_oxY8eyahCkjn1WgM7JOSKGCojAiq99WHwFxncDyRMRm8bXxRTCr0TaVY2im65R3gFDGWCyrMuvFSn8w0PWQ9riW9PQ4irlKaRe6f4I5-WfuElpeMBouhv74_hT2CmoWfhuSdAbN_OWVn6P0zaOLknAf5KWK9A |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Integrated+assemblies%2C+and+methods+of+forming+integrated+assemblies&rft.inventor=HALLER%2C+GORDON+A&rft.date=2021-12-11&rft.externalDBID=B&rft.externalDocID=TWI749679BB |