Memory device having programmable impedance elements with a common conductor formed below bit lines

• Main Authors: GOPALAN, CHAKRAVARTHY, RAMSBEY, MARK T, TSAI, KUEI CHANG, GOPINATH, VENKATESH P, VAN BUSKIRK, MICHAEL A, SHIELDS, JEFFREY ALLAN
• Format: Patent
• Language: Chinese; English
• Published: 21.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

An integrated circuit device can include a plurality of access transistors formed in a substrate having control terminals connected to word lines that extend in a first direction; a plurality of two-terminal programmable impedance elements formed over the substrate; at least one conductive plate structure formed on and having a common conductive connection to, the programmable impedance elements, and extending in at least the first direction; a plurality of storage contacts that extend from a first current terminal of each access transistor to one of the programmable impedance elements; a plurality of bit lines formed over the at least one conductive plate structure, the bit lines extending in a second direction different from the first direction; and a plurality of bit line contacts that extend from a second current terminal of each access transistor through openings in the at least one plate structure to one of the bit lines.