Method for verificating patterns for photomask, method for forming photomask, and semiconductor structure

• Main Authors: HUANG, YI-PING, SUN, CHIAN, KANG, CHIH-KAI, HSUEH, SHENG-YUAN, SHENG, YIUNG, CHEN, HSIN-HSIEN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2019
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

A method for verifying patterns for photomasks includes following steps. A first layout for a first photomask is provided to a computer system, the first layout includes a first device region and a first verification region defined therein, and the first verification region includes a plurality of label patterns formed therein. A second layout for a second photomask is provided to the computer system, the second layout includes a second device region and a second verification region defined therein, and the second verification region includes a plurality of implant patterns. Thereafter, verifying the second layout with the first layout by the label patterns in the first verification region and the implant patterns in the second verification region.