Forming method of metal film, conductive ink, multilayer wiring substrate, semiconductor substrate, and capacitor cell of dynamic random access memory
PROBLEM TO BE SOLVED: To provide a metal film formation method onto a surface capable of forming a metal film easily by a simple method, onto the surface having a contact with a hole, of a substrate having the hole.SOLUTION: A metal film formation method has a step for heating a substrate in the sta...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
01.10.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a metal film formation method onto a surface capable of forming a metal film easily by a simple method, onto the surface having a contact with a hole, of a substrate having the hole.SOLUTION: A metal film formation method has a step for heating a substrate in the state where a conductive ink containing a metal salt and a reducer is allowed to have a contact with a surface having a contact with a hole, of a substrate having the hole. |
---|---|
Bibliography: | Application Number: TW20143106162 |