Forming method of metal film, conductive ink, multilayer wiring substrate, semiconductor substrate, and capacitor cell of dynamic random access memory

• Main Authors: SHIMODA, SUGIROU, OOKITA, KENZOU, WATANABE, KAZUTO, TANAKA, KENROU, ARITOME, ISAO
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2017
• Subjects: ADHESIVES; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL PAINT OR INK REMOVERS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CORRECTING FLUIDS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FILLING PASTES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INKS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; PRINTED CIRCUITS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; USE OF MATERIALS THEREFOR; WOODSTAINS

PROBLEM TO BE SOLVED: To provide a metal film formation method onto a surface capable of forming a metal film easily by a simple method, onto the surface having a contact with a hole, of a substrate having the hole.SOLUTION: A metal film formation method has a step for heating a substrate in the state where a conductive ink containing a metal salt and a reducer is allowed to have a contact with a surface having a contact with a hole, of a substrate having the hole.