Deposition mask, deposition apparatus, and method for forming thin film

• Main Authors: FUKAO, MASATO, HANE, KOUJI, ITOU, MASAHIRO
• Format: Patent
• Language: Chinese; English
• Published: 21.03.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a vapor deposition mask, a vapor deposition device and a vapor deposition method, capable of being applied to a large-sized substrate. Openings 11 are formed on the vapor deposition mask 10 so that distances between their centers may become two times the distance between pixels 51a1, 51a2of a substrate 50. The deposition mask 10 is arranged on a substrate 50, and in the state that they are positioned so that the openings 11 and shielded parts 19 are arranged alternately on each of the pixels 51a1, 51a2, 51ax, the pixel 51a1is deposited opposing the opening 11, and then the deposition mask 10 is shifted by the distance between the centers of the pixels 51a1, 51a2, and the opening 11 is positioned above undeposited pixels 51a2, 51axopposing the shielded part 19 before the shift and in this state a thin film is deposited on the undeposited pixels 51a2, 51ax. Since the distance between the openings 11 is wider than a conventional one, a fear of damaging the deposition mask 10 at the time of forming ope