Gate controlled filed emission triode and process for fabricating the same
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a d...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
21.03.2009
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Subjects | |
Online Access | Get full text |
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