Method of manufacturing a capacitor deep trench and of etching a deep trench opening

A substrate is provided and it has an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer is also deepen the deep trench opening. Th...

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Main Authors CHUNG, NI-MIN, LIN, YUNGANG, HUANG, KAO-SU, LEE, RUEYYR, YEH, TAUAN
Format Patent
LanguageEnglish
Published 21.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A substrate is provided and it has an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer is also deepen the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
AbstractList A substrate is provided and it has an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer is also deepen the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
Author LIN, YUNGANG
CHUNG, NI-MIN
HUANG, KAO-SU
LEE, RUEYYR
YEH, TAUAN
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Snippet A substrate is provided and it has an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Method of manufacturing a capacitor deep trench and of etching a deep trench opening
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