Memory device structure and its manufacturing method

A kind of memory device structure and its manufacturing method are disclosed in the present invention. The structure is composed of a gate structure, a buried bit line, a pull-up bit line, an isolation spacer and a word line. The gate structure is disposed on a substrate. The buried bit line is disp...

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Bibliographic Details
Main Authors LAI, HAN-JAU, LIN, HUNG-SUEI, LU, DAU-JENG
Format Patent
LanguageEnglish
Published 11.02.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A kind of memory device structure and its manufacturing method are disclosed in the present invention. The structure is composed of a gate structure, a buried bit line, a pull-up bit line, an isolation spacer and a word line. The gate structure is disposed on a substrate. The buried bit line is disposed in the substrate on both sides of the gate structure. The pull-up bit line is disposed on the buried bit line. The isolation spacer is disposed at the sidewall of the gate structure for isolating the gate structure from the pull-up bit line. The word line is disposed on the substrate, in which the word line is electrically connected with the gate structure and is isolated from the pull-up bit line through an isolation layer.
Bibliography:Application Number: TW200291100280