Semiconductor integrated circuit device and process for manufacturing the same

• Main Authors: ENOMOTO, HIROYUKI, YAMADA, SATORU, OYU, KIYONORI, TOKUNAGA, TAKAFUMI, SEKIGUCHI, TOSHIHIRO
• Format: Patent
• Language: English
• Published: 01.11.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This invention provides a semiconductor integrated circuit device including a DRAM having fine memory cells and a reduced bit line capacitance. A side wall insulating film of a gate electrode 7 (word line WL) is constructed by a side wall insulating film 10 made of silicon nitride and a side wall in...