Silicon etching solution, method for processing silicon substrate, and method for manufacturing semiconductor device remarkably enhancing the silicon etching rate

• Main Authors: SEIKE, YOSHIKI, HITOMI, TATSUYA, NORO, KOHSUKE
• Format: Patent
• Language: Chinese; English
• Published: 01.07.2024
• Subjects: ADHESIVES; ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; DETERGENT COMPOSITIONS; DETERGENTS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FATTY ACIDS THEREFROM; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

The objective of the present invention is to provide a novel etching solution produced by using innovative technology with a high silicon etching rate. The solution is a silicon etching solution comprising an alkaline organic compound and water, which further includes the compound represented by formula (1) below, with the content of the compound represented by formula (1) being 100 mass ppm or more. (In formula (1), R1 is a single bond or a hydrocarbon group with 1 - 5 carbon atoms, and R2 and R3 are each independently a hydrogen atom, halogen atom, hydroxyl group, amino group, acetyl group, carboxyl group, silyl group, boron group, cyano group, sulfur group, selenium group, or a hydrocarbon group with 1 - 10 carbon atoms, which may also have substituents.) The pH of the silicon etching solution is between 10.0 and 14.0. In the solution, R1 is a single bond, and R2 and R3 are each independently a hydrogen atom or a hydroxyl group. The alkaline organic compound is a quaternary ammonium hydroxide. A method for