Semiconductor devices
A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The fir...
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| Main Authors | , , , , , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
01.02.2024
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| Online Access | Get full text |
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| Abstract | A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The first spacer and the second spacer may be stacked in a horizontal direction on a sidewall of the bit line structure. The horizontal direction may be substantially parallel to the upper surface of the substrate. The conductive structure may include a nitrogen-containing conductive portion at a lateral portion thereof. The first spacer may contact the nitrogen-containing conductive portion. |
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| AbstractList | A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The first spacer and the second spacer may be stacked in a horizontal direction on a sidewall of the bit line structure. The horizontal direction may be substantially parallel to the upper surface of the substrate. The conductive structure may include a nitrogen-containing conductive portion at a lateral portion thereof. The first spacer may contact the nitrogen-containing conductive portion. |
| Author | LEE, MIN-YOUNG WOO, JAE-MIN JUNG, MYUNG-HUN CHONG, KYEONG-OCK YEO, SUNG-JIN HONG, YOON-GI YOO, WON-SEOK |
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| Notes | Application Number: TW202312122518 |
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| RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
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| Snippet | A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive... |
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| Title | Semiconductor devices |
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