Semiconductor devices

A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The fir...

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Bibliographic Details
Main Authors YOO, WON-SEOK, HONG, YOON-GI, YEO, SUNG-JIN, WOO, JAE-MIN, CHONG, KYEONG-OCK, LEE, MIN-YOUNG, JUNG, MYUNG-HUN
Format Patent
LanguageChinese
English
Published 01.02.2024
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Summary:A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The first spacer and the second spacer may be stacked in a horizontal direction on a sidewall of the bit line structure. The horizontal direction may be substantially parallel to the upper surface of the substrate. The conductive structure may include a nitrogen-containing conductive portion at a lateral portion thereof. The first spacer may contact the nitrogen-containing conductive portion.
Bibliography:Application Number: TW202312122518