Method for manufacturing nitride semiconductor substrate

• Main Authors: KUBONO, IPPEI, HAGIMOTO, KAZUNORI
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention is a method for manufacturing a nitride semiconductor substrate obtained by forming a nitride semiconductor on a film-forming substrate, the method being characterized by comprising: (1) a step for heating a film-forming substrate formed of single crystal silicon in a nitrogen atmosphere to form a silicon nitride film on the film-forming substrate; (2) a step for growing an AlN film on the silicon nitride film; and (3) a step for growing a GaN film, an AlGaN film, or both on the AlN film. Consequently, provided is a method which is for manufacturing a nitride semiconductor substrate, and by which Al can be prevented from being diffused into a high-resistance single crystal silicon substrate when an AlN layer is epitaxially grown on the high-resistance single crystal silicon substrate and a GaN or AlGaN layer is epitaxially grown thereon.