Gradient doping epitaxy in superjunction to improve breakdown voltage

Embodiments of processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: depositing, via a first epitaxial growth process, an n-doped silicon material onto a substrate to form an n-doped layer while adjusting a ratio of dopant precursor to silicon...

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Bibliographic Details
Main Authors PAL, ASHISH, BAZIZI, EL MEHDI, ZHENG, YI
Format Patent
LanguageChinese
English
Published 01.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: depositing, via a first epitaxial growth process, an n-doped silicon material onto a substrate to form an n-doped layer while adjusting a ratio of dopant precursor to silicon precursor so that a dopant concentration of the n-doped layer increases from a bottom of the n-doped layer to a top of the n-doped layer; etching the n-doped layer to form a plurality of trenches having sidewalls that are tapered and a plurality of n-doped pillars therebetween; and filling the plurality of trenches with a p-doped material via a second epitaxial growth process to form a plurality of p-doped pillars.
Bibliography:Application Number: TW202211125729