Semiconductor device and manufacturing method thereof

A semiconductor device according to the present embodiment comprises a first electrode film. An interlayer dielectric film is provided on the first electrode film. A contact plug is provided in a contact hole that penetrates through the interlayer dielectric film and reaches the first electrode film...

Full description

Saved in:
Bibliographic Details
Main Author HATAZAKI, AKITSUGU
Format Patent
LanguageChinese
English
Published 01.10.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Be the first to leave a comment!
You must be logged in first