Semiconductor device and manufacturing method thereof
A semiconductor device according to the present embodiment comprises a first electrode film. An interlayer dielectric film is provided on the first electrode film. A contact plug is provided in a contact hole that penetrates through the interlayer dielectric film and reaches the first electrode film...
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| Main Author | |
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| Format | Patent |
| Language | Chinese English |
| Published |
01.10.2022
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device according to the present embodiment comprises a first electrode film. An interlayer dielectric film is provided on the first electrode film. A contact plug is provided in a contact hole that penetrates through the interlayer dielectric film and reaches the first electrode film. The contact plug includes a first metal film and a first conductive film configured to cover an inner wall of an upper portion of the contact hole. The contact plug includes a second metal film configured to cover the first conductive film on the inner wall of the upper portion of the contact hole and cover an inner wall of a lower portion of the contact hole. The contact plug includes a second conductive film configured to be filled inside the second metal film in the contact hole. |
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| AbstractList | A semiconductor device according to the present embodiment comprises a first electrode film. An interlayer dielectric film is provided on the first electrode film. A contact plug is provided in a contact hole that penetrates through the interlayer dielectric film and reaches the first electrode film. The contact plug includes a first metal film and a first conductive film configured to cover an inner wall of an upper portion of the contact hole. The contact plug includes a second metal film configured to cover the first conductive film on the inner wall of the upper portion of the contact hole and cover an inner wall of a lower portion of the contact hole. The contact plug includes a second conductive film configured to be filled inside the second metal film in the contact hole. |
| Author | HATAZAKI, AKITSUGU |
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| Notes | Application Number: TW202110123131 |
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| RelatedCompanies | KIOXIA CORPORATION |
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| Snippet | A semiconductor device according to the present embodiment comprises a first electrode film. An interlayer dielectric film is provided on the first electrode... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device and manufacturing method thereof |
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