Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor

Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor of a plant, comprising repeatedly depositing an epitaxial layer on a substrate wafer in the chamber of the deposition reactor, producing a first number of semiconductor wafers with epitaxial layer, an...

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Bibliographic Details
Main Authors LICHTENEGGER, KORBINIAN, EDMAIER, WALTER, LAUER, MICHAEL, HECHT, HANNES
Format Patent
LanguageChinese
English
Published 16.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor of a plant, comprising repeatedly depositing an epitaxial layer on a substrate wafer in the chamber of the deposition reactor, producing a first number of semiconductor wafers with epitaxial layer, and at the same time conditioning a replacement chamber of the deposition reactor outside the plant by purging the replacement chamber with a purge gas; interrupting the repeated deposition of an epitaxial layer on a substrate wafer; replacing the chamber by the replacement chamber; and continuing the repeated deposition of an epitaxial layer on a substrate wafer in the replacement chamber of the deposition reactor, producing a second number of semiconductor wafers with epitaxial layer.
Bibliography:Application Number: TW202211108342