Memory system and the methods for operating the same

• Main Authors: LUNG, HSIANG-LAN, CHIEN, WEIIH, MILLER, CHRISTOPHER P, GONG, NAN-BO, BRIGHTSKY, MATTHEW JOSEPH
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2021
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A multi-level cell (MLC) one-selector-one-resistor (1S1R) three-dimensional (3D) cross-point memory system includes at least one MLC 1S1R structure including a stacked arrangement of a phase change memory (PCM) cell and a threshold switch selector. An electrically conductive bit line is in electrica...