Semiconductor memory

• Main Authors: ISOBE, KATSUAKI, MAEJIMA, HIROSHI, MOROZUMI, NAOHITO, SHIKATA, GO, FUJIMURA, SUSUMU
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2021
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

An embodiment of the invention provides a semiconductor memory capable of reducing the manufacturing cost. The semiconductor memory according to an embodiment of the present invention includes a bit line BL; a memory cell MC connected to the bit line BL via a selection transistor ST1; a circuit (235...