Projection exposure method and projection exposure apparatus for microlithography

• Main Author: WOLF, ALEXANDER
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2019
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

In a projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask under the control of an operating control system of a projection exposure apparatus, part of the pattern lying in an illumination region is imaged onto the image field on the substrate with the aid of a projection lens, wherein all rays of the projection radiation contributing to the image generation in the image field form a projection beam path. The wavefront of the projection radiation is influenced by actuating a manipulator which has a manipulator surface arranged in the projection beam path and an actuating device for reversibly changing an optical effect of the manipulator surface. Manipulated value changes of the actuating device are determined by the operating control system on the basis of a control programme with a correction algorithm which optimizes a target function. The target function for at least one manipulator comprises a telecentricity sensitivity which describes a re